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2007, Journal of Applied Physics
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2007, Journal of Applied Physics
2010, Journal of Applied Physics
2008, Journal of Applied …
2009, Journal of Applied …
2005, Journal of Applied Physics
Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron-beam-induced deposition (EBID) has been used to deposit carbon films that are similar to those that have recently been used for clamping nanostructures. The film deposition rate was accelerated by placing a paraffin source of hydrocarbon near the area where the
2009
Abstract The effect of pretreatment bias on the nucleation and growth mechanisms of the ultrananocrystalline diamond (UNCD) films on the Si substrate via bias-enhanced nucleation and bias-enhanced growth (BEN-BEG) was investigated using cross-sectional high-resolution transmission electron microscopy, chemical bonding mapping, and Raman spectroscopy.
1997, Journal of applied …
2010, Journal of Applied Physics
Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).
2010, Journal of Applied Physics
2010, Surface and Coatings …
2006, Journal of Applied Physics
Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on Si 100 substrates using the H 2 –Ar–CH 4 gases. Raman scattering data, including the peak position, intensity, area, and width, are analyzed in depth and used to obtain the sp 3-and sp 2-bonded carbon contents and the nature of internal stresses in the films. Polarization behavior of the Raman peaks is analyzed to assess its role on the quantitative analysis of the diamond films, which suggested that the 1150 cm −1 Raman peak in nanocrystalline diamond films could be attributed to sp 2-bonded carbon. The role of the H 2 / Ar content in the gas mixture and substrate temperature on the characteristics of the diamond film is studied. Thickness and grain size of diamond films are also determined by scanning electron microscopy and related to the deposition conditions and Raman results. Deposition conditions, which led to highest sp 3-bonded carbon content and growth rate, are identified.
2006, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2009
Abstract In this study, we have employed infrared (IR) absorption spectroscopy, visible Raman spectroscopy, and x-ray absorption near edge structure (XANES) to quantify the hydrogen (H) content in hydrogenated amorphous carbon (aC: H) films. aC: H films with a hydrogen content varying from 29 to 47 at.% have been synthesized by electron cyclotron resonance chemical vapor deposition at low substrate temperatures (≪ 120 C) applying a wide range of bias voltage, V b,(-300 V≪ V b≪+ 100 V).
2009, Journal of Applied Physics
2010, Physical Review B
2007, Journal of Applied Physics
2008, Journal of Applied Physics
2010, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2004, Physical Review B
2009, Physical Review B
2005, Journal of Applied Physics
Chemical vapor deposition of diamond has opened up new applications in microelectronics, microelectromechanical systems (MEMS), and coating technologies. This paper compares and contrasts the high-temperature electrical behavior of microcrystalline versus nanocrystalline diamond films. Through-thickness current–voltage characteristics between room temperature and 823 K are presented for a series of films synthesized with different gas phase concentrations of nitrogen and argon. One set of samples was characterized by measurements between room temperature and 823 K and a second set by two-step thermal cycling from room temperature to 573 and 823 K. It was found that with increasing nitrogen concentration (up to 0.1% N 2), the resistivity slightly increased followed by a decrease at higher concentrations. Activation energies and barrier heights were in general lower for the more defective films. These results in conjunction with material characterization indicated that more defective diamond films were synthesized at higher nitrogen concentrations in the gas phase.
2008, Journal of Applied Physics
2012, Electrochimica Acta
2010, Applied Physics Letters
2011, Journal of Applied Physics
2003, Journal of Applied Physics
2008, Diamond and Related Materials
2005, Journal of Applied Physics
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. Lett. 16, 439 (1970)]. In terms of devices, Au Schottky barriers in 1965 by Mead [Phys. Lett. 18, 218 (1965)], demonstration of light-emitting diodes (1967) by Drapak [Semiconductors 2, 624 (1968)], in which Cu2O was used as the p-type material, metal-insulator-semiconductor structures (1974) by Minami et al. [Jpn. J. Appl. Phys. 13, 1475 (1974)], ZnO/ZnSe n-p junctions (1975) by Tsurkan et al. [Semiconductors 6, 1183 (1975)], and Al/Au Ohmic contacts by Brillson [J. Vac. Sci. Technol. 15, 1378 (1978)] were attained. The main obstacle to the development of ZnO has been the lack of reproducible and low-resistivity p-type ZnO, as recently discussed by Look and Claflin [Phys. Status Solidi B 241, 624 (2004)]. While ZnO already has many industrial applications owing to its piezoelectric properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in the last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for optoelectronic applications. The attraction can simply be attributed to the large exciton binding energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is also fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. This review gives an in-depth discussion of the mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures.
2010, Reviews of Modern Physics
Carbon nanotubes undoubtedly take a leading position in nanotechnology research owing to their well-known outstanding structural and electronic properties. Inspired by this, hybrid and functionalized tubular structures have been constructed via several modification paths that involve the presence of molecules, generation of defects, and partial or full replacement of the carbon atoms, always maintaining a nanotube structure. The possibilities are
2006, Applied Physics Letters
2002, Diamond and Related Materials
2009, Diamond and Related Materials
2008, Applied Physics …
2010, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2006, Journal of Applied Physics
2006, Physical Review B
2007, Journal of Applied Physics
2008, Applied Physics Letters
2006, Journal of The Electrochemical Society
2007, Journal of Applied Physics
2014, Journal of Applied Physics
2006, Physica Status Solidi (a)
Ultrananocrystalline diamond films (UNCD) grown in an Ar-rich microwave plasma with nitrogen gas added in amounts of 0–25% were studied by Raman spectroscopy using 514.5 and 413.1 nm laser excitation. Besides the Raman spectra of diamond, the first and second order Raman scattering of disordered graphite and polyacetylene were detected and analyzed for samples with different nitrogen content. With surface enhanced Raman scattering (SERS) a variety of surface vibrational modes was observed: (i) CHx stretching vibrations of sp3 and sp2 hybridized carbon in the range of 2800–3100 cm–1; (ii) the sp2 and sp1 hybridized CC(CN) stretching modes in the range of 1600–2300 cm–1; and (iii) lines in the range of 200–1250 cm–1 related to different kinds of vibrations of substituted aromatic rings. These results indicate that in N-doped UNCD films the intergrain material is a well connected mixture of predominantly sp2 phase with some amount of sp1 phase of carbon and nitrogen that is suggested to provide high electrical conductivity. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
2007, Thin Solid Films